Interband transition studies of one-side modulation-doped AlxGa1−xAs/InyGa1−yAs/GaAs asymmetric step quantum wells
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference20 articles.
1. C. Weisbuch, B. Vinter, Quantum Semiconductor Structures, Academic Press, Boston, 1991.
2. Photoluminescence studies of pseudomorphic modulation‐doped AlGaAs/InGaAs/GaAs quantum wells
3. Optical determination of carrier density in pseudomorphic AlGaAs/InGaAs/GaAs hetero‐field‐effect transistor structures by photoluminescence
4. Principle differences between the transport properties of normal AlGaAs/InGaAs/GaAs and inverted GaAs/InGaAs/AlGaAs modulation doped heterostructures
5. Temperature dependence of photoluminescence linewidth in modulation‐doped pseudomorphic high electron mobility transistor AlxGa1−xAs/InyGa1−yAs/GaAs structures
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