Temperature dependence of photoluminescence linewidth in modulation‐doped pseudomorphic high electron mobility transistor AlxGa1−xAs/InyGa1−yAs/GaAs structures-Reference-Cited by-同舟云学术

Temperature dependence of photoluminescence linewidth in modulation‐doped pseudomorphic high electron mobility transistor AlxGa1−xAs/InyGa1−yAs/GaAs structures

Published:1994-12-19 Issue:25 Volume:65 Page:3263-3265
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yu P. W.,Jogai B.,Rogers T. J.,Martin P. A.,Ballingall J. M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.112431

Reference21 articles.

1. An In0.15Ga0.85As/GaAs pseudomorphic single quantum well HEMT

2. Pseudomorphic InGaAs high electron mobility transistors

3. Photoluminescence studies of pseudomorphic modulation‐doped AlGaAs/InGaAs/GaAs quantum wells

4. Optical determination of carrier density in pseudomorphic AlGaAs/InGaAs/GaAs hetero‐field‐effect transistor structures by photoluminescence

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1. Dependence of the electronic parameters on the InyGa1−yAs quantum well width in modulation-doped AlxGa1−xAs/InyGa1−yAs/GaAs strained single quantum wells;Applied Surface Science;2005-02

2. Enhancement of the activation energy in modulation-doped AlxGa1−x As/InyGa1−yAs/GaAs quantum wells due to an embedded deep step layer;Materials Science and Engineering: B;2004-10

3. Atomic arrangements, electronic parameters, and electronic structures in modulation-doped AlxGa1−xAs/InyGa1−yAs/AlxGa1−xAs step quantum wells;Materials Science and Engineering: B;2004-03

4. Strain effect and carrier density in modulation-doped AlxGa1 -xAs/InyGa1 -yAs/GaAs step quantum wells with an embedded potential barrier;Journal of Materials Science Letters;2003-12

5. Interband transition studies of one-side modulation-doped AlxGa1−xAs/InyGa1−yAs/GaAs asymmetric step quantum wells;Materials Research Bulletin;2002-10