Photoluminescence studies of pseudomorphic modulation‐doped AlGaAs/InGaAs/GaAs quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101301
Reference13 articles.
1. Charge control, DC, and RF performance of a 0.35- mu m pseudomorphic AlGaAs/InGaAs modulation-doped field-effect transistor
2. Novel optoelectronic single quantum well devices based on electron bleaching of exciton absorption
3. Optical processes of 2D electron plasma in GaAs-(AlGa)As heterostructures
4. Spectroscopy of a high-mobility GaAs-Ga1−xAlxAs one-side-modulation-doped quantum well
5. Modulation of absorption in field-effect quantum well structures
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1. Application of photoluminescence spectroscopy to studies of In0.38Al0.62As/In0.38Ga0.62As/GaAs metamorphic nanoheterostructures;Semiconductors;2014-07
2. Measurement of the concentration of 2D electrons in δ-doped InGaAs/GaAs pseudomorphic transistor structures using the photoluminescence spectroscopy;Journal of Communications Technology and Electronics;2013-03
3. GaAs(111)A/B surface orientation effects on electron density in normal and inverted pseudomorphic HEMTs;Applied Physics A;2005-06
4. Dependence of the electronic parameters on the InyGa1−yAs quantum well width in modulation-doped AlxGa1−xAs/InyGa1−yAs/GaAs strained single quantum wells;Applied Surface Science;2005-02
5. Enhancement of the activation energy in modulation-doped AlxGa1−x As/InyGa1−yAs/GaAs quantum wells due to an embedded deep step layer;Materials Science and Engineering: B;2004-10
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