Optical determination of carrier density in pseudomorphic AlGaAs/InGaAs/GaAs hetero‐field‐effect transistor structures by photoluminescence
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105904
Reference10 articles.
1. Influence of quantum-well width on device performance of Al/sub 0.30/Ga/sub 0.70/As/In/sub 0.25/Ga/sub 0.75/As (on GaAs) MODFETs
2. Very high power-added efficiency and low-noise 0.15- mu m gate-length pseudomorphic HEMTs
3. Photoluminescence and impurity concentration in GaxIn1−xAsyP1−yalloys lattice‐matched to InP
4. Optical spectroscopy of two-dimensional electrons inGaAs−AlxGa1−xAssingle heterojunctions
5. Fermi edge singularity in the luminescence of modulation‐doped Ga0.47In0.53As/Al0.48In0.52As single heterojunctions
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1. Electron properties of surface InGaAs/InAlAs quantum wells with inverted doping on InP substrates;Semiconductors;2017-06
2. Specific features of the photoluminescence of HEMT nanoheterostructures containing a composite InAlAs/InGaAs/InAs/InGaAs/InAlAs quantum well;Semiconductors;2015-02
3. Application of photoluminescence spectroscopy to studies of In0.38Al0.62As/In0.38Ga0.62As/GaAs metamorphic nanoheterostructures;Semiconductors;2014-07
4. Photoluminescence studies of In0.7Al0.3As/In0.75Ga0.25As/In0.7Al0.3As metamorphic heterostructures on GaAs substrates;Semiconductors;2014-05
5. Measurement of the concentration of 2D electrons in δ-doped InGaAs/GaAs pseudomorphic transistor structures using the photoluminescence spectroscopy;Journal of Communications Technology and Electronics;2013-03
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