Influence of quantum-well width on device performance of Al/sub 0.30/Ga/sub 0.70/As/In/sub 0.25/Ga/sub 0.75/As (on GaAs) MODFETs-Reference-Cited by-同舟云学术

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Influence of quantum-well width on device performance of Al/sub 0.30/Ga/sub 0.70/As/In/sub 0.25/Ga/sub 0.75/As (on GaAs) MODFETs

Published:1989-05 Issue:5 Volume:36 Page:833-838
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Nguyen L.D.,Radulescu D.C.,Foisy M.C.,Tasker P.J.,Eastman L.F.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/16/7416/00299663.pdf?arnumber=299663

Cited by 75 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. On an InGaP/InGaAs Double Channel Pseudomorphic High Electron Mobility Transistor With Graded Triple $\delta$-Doped Sheets;IEEE Transactions on Electron Devices;2008-11

4. Quantum oscillations of the luminescence from a modulation-doped GaAs∕InGaAs∕GaAlAs quantum well;Applied Physics Letters;2006-01-30

5. Optical absorption coefficient of quantum wires in strain and electric fields with intermixing interfaces;Physical Review B;2005-09-20

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