Dominating migration barrier for intrinsic defects in gallium oxide: Dose-rate effect measurements-Reference-Cited by-同舟云学术

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Dominating migration barrier for intrinsic defects in gallium oxide: Dose-rate effect measurements

Published:2021-06-07 Issue:23 Volume:118 Page:232101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Azarov Alexander¹^ORCID,Venkatachalapathy Vishnukanthan¹²^ORCID,Monakhov Edouard V.¹,Kuznetsov Andrej Yu.¹^ORCID

Affiliation:

1. Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo, Blindern, PO Box 1048, N-0316 Oslo, Norway

2. Department of Materials Science, National Research Nuclear University, “MEPhI,” 31 Kashirskoe Hwy, 115409 Moscow, Russian Federation

Funder

Research Council of Norway

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0051047

Reference34 articles.

1. First-principles calculations for point defects in solids

2. Self- and foreign-atom diffusion in semiconductor isotope heterostructures. II. Experimental results for silicon

3. Self-Diffusion ofS31iandG71ein RelaxedSi0.20Ge0.80Layers

4. Self-diffusion measurements in isotopic heterostructures of undoped andin situdoped ZnO: Zinc vacancy energetics

5. Radiation Enhanced Silicon Self-Diffusion and the Silicon Vacancy at High Temperatures

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