Self-diffusion measurements in isotopic heterostructures of undoped andin situdoped ZnO: Zinc vacancy energetics-Reference-Cited by-同舟云学术

Self-diffusion measurements in isotopic heterostructures of undoped andin situdoped ZnO: Zinc vacancy energetics

Published:2016-11-17 Issue:19 Volume:94 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Azarov Alexander,Venkatachalapathy Vishnukanthan,Mei Zengxia,Liu Lishu,Du Xiaolong,Galeckas Augustinas,Monakhov Edouard,Svensson Bengt G.,Kuznetsov Andrej

Funder

Norges Forskningsråd

National Natural Science Foundation of China

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.94.195208/fulltext

Reference36 articles.

1. Fundamentals of zinc oxide as a semiconductor

2. Zinc Oxide Materials for Electronic and Optoelectronic Device Applications

3. Defects in ZnO

4. Intrinsicn-type versusp-type doping asymmetry and the defect physics of ZnO

5. Doping Asymmetry Problem in ZnO: Current Status and Outlook

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