Investigation of Ga interstitial and vacancy diffusion in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>β</mml:mi><mml:mtext>−</mml:mtext><mml:msub><mml:mi>Ga</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math> via split defects: A direct approach via master diffusion equations-Reference-Cited by-同舟云学术

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Investigation of Ga interstitial and vacancy diffusion in β−Ga2O3 via split defects: A direct approach via master diffusion equations

Published:2024-05-13 Issue:5 Volume:8 Page:
ISSN:2475-9953
Container-title:Physical Review Materials
language:en
Short-container-title:Phys. Rev. Materials

Author:

Lee Channyung¹^ORCID,Scarpulla Michael A.²^ORCID,Ertekin Elif¹³^ORCID

Affiliation:

1. Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, 1206 W. Green Street, Urbana, Illinois 61801, USA

2. Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112, USA

3. Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA

Funder

Air Force Office of Scientific Research

National Science Foundation

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.8.054603/fulltext

Reference52 articles.

1. Wide bandgap semiconductor materials and devices

2. Wide-bandgap semiconductor materials: For their full bloom

3. Point defects in Ga2O3

4. Electron–phonon effects and temperature-dependence of the electronic structure of monoclinic β-Ga2O3

5. State-of-the-art technologies of gallium oxide power devices

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