Inverse dynamic defect annealing in ZnO

Author:

Azarov Alexander1ORCID,Galeckas Augustinas1ORCID,Wendler Elke2ORCID,Monakhov Eduard1ORCID,Kuznetsov Andrej1ORCID

Affiliation:

1. Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo 1 , PO Box 1048 Blindern, N-0316 Oslo, Norway

2. Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik 2 , Max-Wien-Platz 1, 07743 Jena, Germany

Abstract

Radiation tolerance of semiconductors depends on the dynamic defect annealing efficiency during irradiation. Consequently, it matters at what temperature one keeps the sample during irradiation, so that elevated temperatures typically result in lower remaining disorder. In the present work, we observed an opposite trend for the nitrogen ion implants into zinc oxide. Combining ion channeling technique, x-ray diffraction, and photoluminescence spectroscopy, we demonstrate that the interaction of nitrogen with radiation defects promotes an inverse dynamic annealing process, so that the increase in irradiation temperature leads to a more efficient defect formation. As a result, the residual radiation disorder is maximized at 650 °C and this state is characterized by the appearance of prominent optical signatures associated with zinc interstitials and strongly reduced strain accumulation as compared to the samples implanted at lower temperatures. However, for higher implantation temperatures, the impact of the inverse annealing decreases correlating with the surface degradation and loss of nitrogen.

Funder

Research Council of Norway

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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