Radiation Enhanced Silicon Self-Diffusion and the Silicon Vacancy at High Temperatures-Reference-Cited by-同舟云学术

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Radiation Enhanced Silicon Self-Diffusion and the Silicon Vacancy at High Temperatures

Published:2003-12-10 Issue:24 Volume:91 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Bracht H.,Pedersen J. Fage,Zangenberg N.,Larsen A. Nylandsted,Haller E. E.,Lulli G.,Posselt M.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.91.245502/fulltext

Reference23 articles.

1. Native Defects and their Interactions with Impurities in Silicon

2. Intrinsic point defects in crystalline silicon: Tight-binding molecular dynamics studiesof self-diffusion, interstitial-vacancy recombination, and formation volumes

3. Point Defect Dynamics and the Oxidation‐Induced Stacking‐Fault Ring in Czochralski‐Grown Silicon Crystals

4. On the Properties of the Intrinsic Point Defects in Silicon: A Perspective from Crystal Growth and Wafer Processing

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