On the Properties of the Intrinsic Point Defects in Silicon: A Perspective from Crystal Growth and Wafer Processing
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference24 articles.
1. The mechanism of swirl defects formation in silicon
2. Vacancy and self-interstitial concentration incorporated into growing silicon crystals
3. Formation Process of Stacking Faults with Ringlike Distribution in CZ-Si Wafers
4. Vacancy-type microdefect formation in Czochralski silicon
5. The effect of thermal history during crystal growth on oxygen precipitation in Czochralski-grown silicon
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