Electrical quality of low‐temperature (Tdep=775 °C) epitaxial silicon: The effect of deposition rate
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.340249
Reference12 articles.
1. Dependence of residual damage on temperature during Ar+sputter cleaning of silicon
2. Bulk‐quality bipolar transistors fabricated in low‐temperature (Tdep=800 °C) epitaxial silicon
3. An optimizedinsituargon sputter cleaning process for device quality low‐temperature (T≤800 °C) epitaxial silicon: Bipolar transistor andpnjunction characterization
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1. Quality of Selective Silicon Epitaxial Films Deposited Using Disilane and Chlorine;Journal of The Electrochemical Society;1999-06-01
2. A Low‐Thermal‐Budget In Situ Doped Multilayer Silicon Epitaxy Process for MOSFET Channel Engineering;Journal of The Electrochemical Society;1999-03-01
3. Ultrahigh Vacuum Rapid Thermal Chemical Vapor Deposition of Epitaxial Silicon on (100) Silicon: II . Carbon Incorporation info Layers and at Interfaces of Multilayer Structures;Journal of The Electrochemical Society;1995-11-01
4. Effects of SiH2Cl2 on low-temperature (≤200°C) Si epitaxy by photochemical vapor deposition;Applied Surface Science;1994-05
5. Delta doping in silicon;Critical Reviews in Solid State and Materials Sciences;1993-01
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