An optimizedinsituargon sputter cleaning process for device quality low‐temperature (T≤800 °C) epitaxial silicon: Bipolar transistor andpnjunction characterization-Reference-Cited by-同舟云学术

An optimizedinsituargon sputter cleaning process for device quality low‐temperature (T≤800 °C) epitaxial silicon: Bipolar transistor andpnjunction characterization

Published:1987-11-15 Issue:10 Volume:62 Page:4255-4268
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Burger W. R.,Reif R.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.339099

Reference34 articles.

1. Low Temperature Silicon Epitaxy by Hot Wall Ultrahigh Vacuum/Low Pressure Chemical Vapor Deposition Techniques: Surface Optimization

2. Bipolar transistor fabrication in low-temperature (745°C) ultra-low-pressure chemical-vapor-deposited epitaxial silicon

3. Bulk‐quality bipolar transistors fabricated in low‐temperature (Tdep=800 °C) epitaxial silicon

4. UV ozone cleaning of silicon substrates in silicon molecular beam epitaxy

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