Effects of SiH2Cl2 on low-temperature (≤200°C) Si epitaxy by photochemical vapor deposition-Reference-Cited by-同舟云学术

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Effects of SiH2Cl2 on low-temperature (≤200°C) Si epitaxy by photochemical vapor deposition

Published:1994-05 Issue: Volume:79-80 Page:215-219
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Oshima Takayuki,Sano Masashi,Yamada Akira,Konagai Makoto,Takahashi Kiyoshi

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference14 articles.

1. Very low temperature (<400 °C) silicon molecular beam epitaxy: The role of low energy ion irradiation

2. Bistable conditions for low‐temperature silicon epitaxy

3. Epitaxial Growth of Silicon by Plasma Chemical Vapor Deposition at a Very Low Temperature of 250°C

4. Defect microstructure in single crystal silicon thin films grown at 150° C-305° C by remote plasma-enhanced chemical vapor deposition

5. Epitaxial growth of silicon by photochemical vapor deposition at a very low temperature of 200 °C

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1. A review on sustainable graphene production from rice husks: Strategies and key considerations;Chemical Engineering Journal;2024-10

2. New Materials: Semiconductors for Solar Cells;Materials Science and Technology;2013-02-15

3. A review of thin-film crystalline silicon for solar cell applications. Part 2: Foreign substrates;Solar Energy Materials and Solar Cells;2001-05

4. Improvement of Stabilized Efficiency of Amorphous Silicon Solar Cell by SiH2Cl2Addition;Japanese Journal of Applied Physics;1999-07-15

5. The Growth of Homo-Epitaxial Silicon at Low Temperatures Using Hot Wire Chemical Vapor Deposition;MRS Proceedings;1999

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