Trapped positive charge in plasma‐enhanced chemical vapor deposited silicon dioxide films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103327
Reference23 articles.
1. Low‐temperature deposition of high‐quality silicon dioxide by plasma‐enhanced chemical vapor deposition
2. Electrical characteristics of very thin SiO2deposited at low substrate temperatures
3. IIIB-5 Fabrication of thin gate Oxide MOSFET's using low-temperature plasma-enhanced chemical-vapor-deposited SiO2
4. Thin-film transistors incorporating a thin, high-quality PECVD SiO/sub 2/ gate dielectric
5. High-quality deposited gate oxide MOSFET's and the importance of surface preparation
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