IIIB-5 Fabrication of thin gate Oxide MOSFET's using low-temperature plasma-enhanced chemical-vapor-deposited SiO2-Reference-Cited by-同舟云学术

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IIIB-5 Fabrication of thin gate Oxide MOSFET's using low-temperature plasma-enhanced chemical-vapor-deposited SiO2

Published:1987-11 Issue:11 Volume:34 Page:2367-2367
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Stasiak J.,Batey J.,Tierney E.,Li J.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31983/01486985.pdf?arnumber=1486985

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-temperature processed MOSFETs with liquid phase deposited SiO/sub 2-x/Fx as gate insulator;IEEE Electron Device Letters;1995-07

2. Fabrication of MOSFETs using low-temperature liquid-phase deposited oxide;Microelectronic Engineering;1995-06

3. Trapped positive charge in plasma‐enhanced chemical vapor deposited silicon dioxide films;Applied Physics Letters;1990-03-12

4. High-quality deposited gate oxide MOSFET's and the importance of surface preparation;IEEE Electron Device Letters;1989-06

5. Low‐temperature deposition of silicon dioxide films from electron cyclotron resonant microwave plasmas;Journal of Applied Physics;1989-03-15

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