Effect of the native oxide on the surface passivation of Si by Al2O3
Author:
Affiliation:
1. Department of Physics, University of Oslo, N-0316 Oslo, Norway
2. MiNa Lab, SINTEF, Oslo, Norway
Funder
Norges Forskningsråd
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0051215
Reference57 articles.
1. Revisiting thin silicon for photovoltaics: a technoeconomic perspective
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5. Enhanced field effect passivation of c-Si surface via introduction of trap centers: Case of hafnium and aluminium oxide bilayer films deposited by thermal ALD
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