Charge‐quantization effects on current‐voltage characteristics of AlGaAs/GaAs resonant tunneling diodes with spacer layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346349
Reference9 articles.
1. Oscillations up to 420 GHz in GaAs/AlAs resonant tunneling diodes
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3. Resonant tunneling transport at 300 K in GaAs‐AlGaAs quantum wells grown by metalorganic chemical vapor deposition
4. Effect of Silicon Doping Profile on I-V Characteristics of an AlGaAs/GaAs Resonant Tunneling Barrier Structure Grown by MBE
5. Quasi‐ballistic resonant tunneling of minority electrons into the excited states of a quantum well
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3. Highly-mismatched InAs/InSe heterojunction diodes;Applied Physics Letters;2016-10-31
4. Observation of the scattered electrons in the resonant tunneling regime using a three-terminal quantum-well heterostructure;Springer Proceedings in Physics;2001
5. Electron transfer between two coupled quantum wells in a resonant tunneling diode structure;Solid-State Electronics;1995-11
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