Fighting Broken Symmetry with Doping: Toward Polar Resonant Tunneling Diodes with Symmetric Characteristics-Reference-Cited by-同舟云学术

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Fighting Broken Symmetry with Doping: Toward Polar Resonant Tunneling Diodes with Symmetric Characteristics

Published:2020-03-19 Issue:3 Volume:13 Page:
ISSN:2331-7019
Container-title:Physical Review Applied
language:en
Short-container-title:Phys. Rev. Applied

Author:

Encomendero Jimy^ORCID,Protasenko Vladimir,Rana Farhan,Jena Debdeep,Xing Huili Grace

Funder

Office of Naval Research

National Science Foundation

MRSEC program

DATE MURI Program

NSF-DMREF

EFRI-NewLAW

CNF and CCMR Shared Facilities

NSF NNCI program

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.13.034048/fulltext

Reference37 articles.

1. Accurate dependence of gallium nitride thermal conductivity on dislocation density

2. Density-dependent electron transport and precise modeling of GaN high electron mobility transistors

3. Frequency Limitations of Resonant-Tunnelling Diodes in Sub-THz and THz Oscillators and Detectors

4. Spontaneous emission from GaN/AlGaN terahertz quantum cascade laser grown on GaN substrate

5. Power Amplification at THz via Plasma Wave Excitation in RTD-Gated HEMTs

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A switchable high-sensitivity strain sensor based on piezotronic resonant tunneling junctions;Nano Research;2024-09-05

2. High-performance negative differential resistance characteristics in homoepitaxial AlN/GaN double-barrier resonant tunneling diodes;Japanese Journal of Applied Physics;2024-08-01

3. Investigation of Peak-to-Valley Current Ratio of GaN/AlN Resonant Tunneling Diodes;IEEE Transactions on Electron Devices;2023-07

4. Defeating broken symmetry with doping: Symmetric resonant tunneling in noncentrosymetric heterostructures;Physical Review B;2023-03-02

5. Planar AlN/GaN resonant tunneling diodes fabricated using nitrogen ion implantation;Applied Physics Letters;2023-02-06

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