Electron transfer between two coupled quantum wells in a resonant tunneling diode structure-Reference-Cited by-同舟云学术

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Electron transfer between two coupled quantum wells in a resonant tunneling diode structure

Published:1995-11 Issue:11 Volume:38 Page:1899-1904
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Mounaix P,Libberecht J.M,Lippens D

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. New functional field-effect transistor based on wavefunction modulation in δ-doped double quantum wells

2. Coupled-quantum-well field-effect resonant tunneling transistor for multi-valued logic/memory applications

3. Self-consistent modeling of resonant interband tunneling in bipolar tunneling field-effect transistors

4. Charge‐quantization effects on current‐voltage characteristics of AlGaAs/GaAs resonant tunneling diodes with spacer layers

5. Estimation of temperature limit for negative differential resistance using resonant tunnelling

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Resonant tunneling of electrons in biased symmetric triangular double barrier nanostructure triodes;Physica Scripta;2023-09-08

2. Impact of pressure on the resonant energy and resonant frequency for two barriers Ga_1−xAl_xAs/GaAs nanostructures;Physica Scripta;2022-12-06

3. Effect of the nonparabolicity on the resonant lifetimes and resonant energies of symmetric GaAs/AlxGa1-xAs double barrier nanostructures;Physica B: Condensed Matter;2022-05

4. Quantum resonant tunneling in semiconductor double-barrier structure;Optik;2018-10

5. Terahertz electroluminescence from Be δ-doped GaAs/AlAs quantum well;Applied Physics Letters;2010-07-12

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