Effect of Silicon Doping Profile on I-V Characteristics of an AlGaAs/GaAs Resonant Tunneling Barrier Structure Grown by MBE-Reference-Cited by-同舟云学术

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Effect of Silicon Doping Profile on I-V Characteristics of an AlGaAs/GaAs Resonant Tunneling Barrier Structure Grown by MBE

Published:1986-07-20 Issue:Part 2, No. 7 Volume:25 Page:L577-L579
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Muto Shunichi,Inata Tsuguo,Ohnishi Hiroaki,Yokoyama Naoki,Hiyamizu Satoshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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