Precise Control of Resonant Tunneling Current in AlAs/GaAs/AlAs Double Barrier Diodes with Atomically-Controlled Barrier Widths
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 85 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Broken Symmetry Effects due to Polarization on Resonant Tunneling Transport in Double-Barrier Nitride Heterostructures;Physical Review Applied;2019-03-13
2. Performance of resonant tunneling diodes based on the nonpolar-oriented AlGaN/GaN heterostructures;Japanese Journal of Applied Physics;2018-06-07
3. Spin-valve effect by ballistic transport in ferromagnetic metal (MnAs)/semiconductor (GaAs) hybrid heterostructures;Physical Review B;2008-06-26
4. Effects of series and parallel resistances on the current-voltage characteristics of small-area air-bridge resonant tunneling diode;Journal of Applied Physics;2008
5. Fabrication of Submicron GaAs/AlAs Double-Barrier Resonant Tunneling Diodes by Wet Etching with In Droplets as Mask;Japanese Journal of Applied Physics;2007-10-19
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