Depth distributions of1H,2H, and4He implanted into HgCdTe and CdTe measured by secondary ion mass spectrometry
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95004
Reference19 articles.
1. TYPE CONVERSION ANDn‐pJUNCTION FORMATION IN Hg1−xCdxTe PRODUCED BY PROTON BOMBARDMENT
2. Ion Implantation Study of HgCdTe
3. Boron ion implantation in Hg1−xCdxTe
4. Effects of implantation and annealing temperatures on implantation induced damage in HgCdTe
5. Thermal pulse annealing of boron‐implanted HgCdTe
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