Channel stress measurements of 45 nm node transistors with embedded silicon-germanium source and drain using ultraviolet Raman spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3431295
Reference23 articles.
1. Fundamentals of silicon material properties for successful exploitation of strain engineering in modern CMOS manufacturing
2. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
3. Uniaxial-process-induced strained-Si: extending the CMOS roadmap
4. Lattice strain analysis of transistor structures with silicon–germanium and silicon–carbon source∕drain stressors
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1. Lattice contraction due to boron doping in silicon;Materials Science in Semiconductor Processing;2018-11
2. Mechanics of silicon nitride thin-film stressors on a transistor-like geometry;APL Materials;2013-10
3. Impact of Implantation and Annealing on Channel Strain of Transistors with Embedded Silicon–Germanium Source and Drain;Japanese Journal of Applied Physics;2011-04-05
4. Impact of Implantation and Annealing on Channel Strain of Transistors with Embedded Silicon–Germanium Source and Drain;Japanese Journal of Applied Physics;2011-04-01
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