Lattice contraction due to boron doping in silicon
Author:
Funder
Nano 2017 Program
European Union
Investissement“ d’Avenir
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference27 articles.
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4. Carrier-Mobility Enhancement via Strain Engineering in Future Thin-Body MOSFETs
5. Strain mapping of tensiley strained silicon transistors with embedded Si1−yCy source and drain by dark-field holography
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