Toward Highly Efficient Low‐Carbon Footprint Solar Cells: Impact of High‐Temperature Processing on Epitaxially Grown p‐Type Silicon Wafers

Author:

Rittmann Clara1ORCID,Messmer Pascal1,Niewelt Tim123,Supik Ella Susann1,Heinz Friedemann D.12,Richter Armin1,Mouafi Yves Patrick Botchak4,Sanz Sarah4,Terheiden Barbara4,Weiss Charlotte1,Drießen Marion1,Schindler Florian1,Janz Stefan1,Schubert Martin Christian1

Affiliation:

1. Fraunhofer Institute for Solar Energy Systems (ISE) Heidenhofstraße 2 Freiburg 79110 Germany

2. Department of Sustainable Systems Engineering (INATECH) University of Freiburg Emmy‐Noether‐Straße 2 79110 Freiburg Germany

3. School of Engineering University of Warwick Coventry CV4 7AL UK

4. University of Konstanz Universitätsstraße 10 78464 Konstanz Germany

Abstract

Conventional silicon (Si) wafers are produced by energy‐intensive ingot crystallization which is responsible for a major share of a solar cell's carbon footprint. This work explores Si epitaxially grown silicon wafers (EpiWafers) that are produced by direct epitaxial deposition of trichlorosilane on a reusable substrate. This approach requires less energy and material and hence offers a potential for reduced cost and carbon footprint. Solar cells made from EpiWafers usually suffer from efficiency losses due to recombination at structural crystal defects associated with epitaxial growth. The nature of these defects is investigated and defects at the EpiWafer's back surface are critical. Most of these defects are highly recombination‐active, pairwise‐connected misfit dislocations in the <110> direction. They originate from a lattice mismatch between the highly doped substrate and the less‐doped epitaxially grown layer. In this contribution, the detrimental impact of these defects can be mitigated using typical manufacturing processes of high‐efficiency solar cells, such as KOH etching, gettering, and oxidation. Local minority charge carrier lifetimes as high as 2.2 ms after industrially feasible processes are reported. Simulations using efficiency‐limiting bulk recombination analysis implies that the material would allow conversion efficiencies of up to 25.6% considering tunnel oxide‐passivated contact acting as rear emitter solar cell design.

Publisher

Wiley

Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3