Strain mapping of tensiley strained silicon transistors with embedded Si1−yCy source and drain by dark-field holography
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3192356
Reference27 articles.
1. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
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5. Effect of mechanical stress induced by etch-stop nitride: impact on deep-submicron transistor performance
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