Engineered substrates and their future role in microelectronics
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference20 articles.
1. Elimination of interface defects in mismatched epilayers by a reduction in growth area
2. Totally relaxed GexSi1−xlayers with low threading dislocation densities grown on Si substrates
3. Dislocations in Relaxed SiGe/Si Heterostructures
4. Extremely high electron mobility in Si/GexSi1−xstructures grown by molecular beam epitaxy
5. Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si
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