Impact of Implantation and Annealing on Channel Strain of Transistors with Embedded Silicon–Germanium Source and Drain
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference15 articles.
1. Uniaxial-process-induced strained-Si: extending the CMOS roadmap
2. Strain relaxation in transistor channels with embedded epitaxial silicon germanium source/drain
3. Embedded Source/Drain SiGe Stressor Devices on SOI: Integrations, Performance, and Analyses
4. Channel stress measurements of 45 nm node transistors with embedded silicon-germanium source and drain using ultraviolet Raman spectroscopy
5. Post-annealing sequence effects on the characteristics of 20keV BF2 ion implantation at various ion fluences
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