Morphological evolution and strain relaxation of Ge islands grown on chemically oxidized Si(100) by molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2067708
Reference34 articles.
1. High-quality Ge epilayers on Si with low threading-dislocation densities
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