Control of Ge island coalescence for the formation of nanowires on silicon-Reference-Cited by-同舟云学术

Control of Ge island coalescence for the formation of nanowires on silicon

Published:2024 Issue:4 Volume:9 Page:555-565
ISSN:2055-6756
Container-title:Nanoscale Horizons
language:en
Short-container-title:Nanoscale Horiz.

Author:

Ramanandan Santhanu Panikar¹^ORCID,Reñé Sapera Joel¹,Morelle Alban²,Martí-Sánchez Sara³^ORCID,Rudra Alok¹⁴,Arbiol Jordi³⁵^ORCID,Dubrovskii Vladimir G.⁶,Fontcuberta i Morral Anna¹⁴⁷^ORCID

Affiliation:

1. Laboratory of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne EPFL, Lausanne 1015, Switzerland

2. Solid State Laboratory, ETH Zurich, 8093 Zurich, Switzerland

3. Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona, Catalonia, Spain

4. Institute of Physics, Faculty of Basic Sciences, Ecole Polytechnique Fédérale de Lausanne EPFL, Lausanne 1015, Switzerland

5. ICREA, Pg. Lluís Companys 23, 08010 Barcelona, Catalonia, Spain

6. Faculty of Physics, St. Petersburg State University, Universitetskaya Embankment 13B, 199034 St. Petersburg, Russia

7. Center for Quantum Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland

Abstract

Schematics on the influence of Ge islands on the formation of continuous nanowires on silicon. In selective area epitaxy, islands with low density and low aspect ratio merge together to produce a continuous Ge nanowire on a silicon substrate.

Funder

Institut Català de Nanociència i Nanotecnologia

National Center of Competence in Research Spin Qubit in Silicon

Saint Petersburg State University

European Regional Development Fund

Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung

Generalitat de Catalunya

European Commission

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/NH/D3NH00573A