Effects of substrate misorientation on anisotropic electron transport in InGaAs/GaAs heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105308
Reference21 articles.
1. Effects of substrate misorientation on the properties of (Al, Ga)As grown by molecular beam epitaxy
2. Properties of AlxGa1−xAs (xAl≂0.3) grown by molecular‐beam epitaxy on misoriented substrates
3. Effects of substrate misorientation and background impurities on electron transport in molecular‐beam‐epitaxial‐grown GaAs/AlGaAs modulation‐doped quantum‐well structures
4. Anisotropic transport in modulation‐doped quantum‐well structures
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1. Influence of buffer-layer construction and substrate orientation on the electron mobilities in metamorphic In0.70Al0.30As/In0.76Ga0.24As/In0.70Al0.30As structures on GaAs substrates;Semiconductors;2015-07
2. Effect of GaAs (100) substrate misorientation on the electrical parameters and surface morphology of metamorphic In0.7Al0.3As/In0.75Ga0.25As/In0.7Al0.3As HEMT nanoheterostructures;Semiconductors;2014-01
3. Strain relaxation induced deep levels in In1−xGaxAs thin films;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1994-07
4. Origin of optical anisotropy in strained InxGa1−xAs/InP and InyAl1−yAs/InP heterostructures;Journal of Electronic Materials;1994-04
5. Anisotropic Structural and Electronic Properties of InGaAs/GaAs Heterojunctions;MRS Proceedings;1994
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