Strain relaxation induced deep levels in In1−xGaxAs thin films-Reference-Cited by-同舟云学术

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Strain relaxation induced deep levels in In1−xGaxAs thin films

Published:1994-07 Issue:4 Volume:12 Page:1050-1053
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Raisanen A.,Brillson L. J.,Goldman R. S.,Kavanagh K. L.,Wieder H. H.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.579283

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Semiconductor Heterojunctions;An Essential Guide to Electronic Material Surfaces and Interfaces;2016-05-20

2. Semiconductor Heterojunctions;Surfaces and Interfaces of Electronic Materials;2012-12-28

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