Author:
Goldman R.S.,Rammohan K.,Raisanen A.,Goorsky M.,Brillson L.J.,Rich D.H.,Wieder H.H.,Kavanagh K.L.
Abstract
ABSTRACTWe have investigated the structural and electronic properties of partially strain-relaxed InxGal-xAs/GaAs heterojunctions, grown by molecular beam epitaxy (MBE) on both misoriented and nominally flat (001) GaAs substrates. Mobility measurements using Hall bars aligned along the [110] and [110] in-plane directions reveal an asymmetry in bulk InGaAs electron mobility. This asymmetry is correlated with an anisotropic bulk strain relaxation and interfacial misfit dislocation density, determined from high-resolution x-ray rocking curves (XRC), as well as a polarization anisotropy in cathodoluminescence (CL).
Publisher
Springer Science and Business Media LLC
Cited by
1 articles.
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