Properties of AlxGa1−xAs (xAl≂0.3) grown by molecular‐beam epitaxy on misoriented substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336456
Reference17 articles.
1. Effects of substrate misorientation on the properties of (Al, Ga)As grown by molecular beam epitaxy
2. Influence of Substrate Temperature on the Morphology of Al x Ga1 − x As Grown by Molecular Beam Epitaxy
3. Investigation of surface roughness of molecular beam epitaxy Ga1−xAlxAs layers and its consequences on GaAs/Ga1−xAlxAs heterostructures
4. Morphology of GaAs and AlxGa1−xAs grown by molecular beam epitaxy
5. Singular instabilities on LPE GaAs, CVD Si, and MBE InP growth surfaces
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1. Real-time RHEED investigation of indium segregation in InGaAs layers grown on vicinal GaAs(001) substrates;Physical Review B;2005-10-04
2. Properties of GaAs/AlGaAs quantum wells grown by MOVPE using vicinal GaAs substrates;Journal of Crystal Growth;2004-12
3. Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces;Journal of Applied Physics;2001-09
4. Improvement of AlAs–GaAs interface roughness grown with high As overpressures;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000
5. Electrical and optical properties of undoped GaSb grown by molecular beam epitaxy using cracked Sb1 and Sb2;Journal of Crystal Growth;1999-12
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