Properties of GaAs/AlGaAs quantum wells grown by MOVPE using vicinal GaAs substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Microroughness and exciton localization in (Al,Ga)As/GaAs quantum wells
2. Epitaxial growth of InGaAs on misoriented GaAs(100) substrate by metal-organic vapor phase epitaxy
3. Optical properties of ultrathin GaAs layers embedded inAlxGa1−xAs
4. C- and O-incorporation in (AlGa)As epitaxial layers grown by MOVPE using TBAs
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1. Peculiarities of photoluminescence of vertical n +/n-GaAs/Al0.25Ga0.75As MBE- and MOCVD-grown structures designed for microwave detectors;Applied Physics A;2015-06-26
2. Triclinic deformation of InGaN layers grown on vicinal surface of GaN (00.1) substrates;Journal of Applied Physics;2013-09-21
3. Optics, morphology, and growth kinetics of GaAs/AlxGa1−xAs quantum wells grown on vicinal substrates by metalorganic vapor phase epitaxy;Physical Review B;2011-10-17
4. Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes;Journal of Crystal Growth;2010-12
5. AlGaAs/GaAs/AlGaAs quantum wells as a sensitive tool for the MOVPE reactor environment;Journal of Crystal Growth;2010-10
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