Effects of substrate misorientation and background impurities on electron transport in molecular‐beam‐epitaxial‐grown GaAs/AlGaAs modulation‐doped quantum‐well structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339707
Reference27 articles.
1. Properties of AlxGa1−xAs (xAl≂0.3) grown by molecular‐beam epitaxy on misoriented substrates
2. Structural changes of the interface, enhanced interface incorporation of acceptors, and luminescence efficiency degradation in GaAs quantum wells grown by molecular beam epitaxy upon growth interruption
3. Atomic-Scale Structures of Top and Bottom Heterointerfaces in GaAs-AlxGa1-xAs (x=0.2-1) Quantum Wells Prepared by Molecular Beam Epitaxy with Growth Interruption
4. Investigation of surface roughness of molecular beam epitaxy Ga1−xAlxAs layers and its consequences on GaAs/Ga1−xAlxAs heterostructures
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1. Comparison of mixed anion, InAsyP1−y and mixed cation, InxAl1−xAs metamorphic buffers grown by molecular beam epitaxy on (100) InP substrates;Journal of Applied Physics;2004-04-15
2. Correlation of anisotropic strain relaxation with substrate misorientation direction at InGaAs/GaAs(001) interfaces;Applied Physics Letters;1995-07-17
3. Anisotropic structural, electronic, and optical properties of InGaAs grown by molecular beam epitaxy on misoriented substrates;Applied Physics Letters;1994-09-12
4. Anisotropic Structural and Electronic Properties of InGaAs/GaAs Heterojunctions;MRS Proceedings;1994
5. Low-temperature photoluminescence study of Cd1−xMnxTe films grown by pulsed laser evaporation and epitaxy;Surface Science;1993-09
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