Atomic-layer deposited thulium oxide as a passivation layer on germanium-Reference-Cited by-同舟云学术

Atomic-layer deposited thulium oxide as a passivation layer on germanium

Published:2015-06-07 Issue:21 Volume:117 Page:214104
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Mitrovic I. Z.¹^ORCID,Hall S.¹,Althobaiti M.²,Hesp D.²,Dhanak V. R.²,Santoni A.³,Weerakkody A. D.¹,Sedghi N.¹,Chalker P. R.⁴,Henkel C.⁵^ORCID,Dentoni Litta E.⁵^ORCID,Hellström P.-E.⁵,Östling M.⁵^ORCID,Tan H.⁶,Schamm-Chardon S.⁶^ORCID

Affiliation:

1. Department of Electrical Engineering and Electronics, University of Liverpool, Brownlow Hill, Liverpool L69 3GJ, United Kingdom

2. Department of Physics and Stephenson Institute for Renewable Energy, University of Liverpool, Liverpool L69 7ZF, United Kingdom

3. ENEA, Frascati Research Centre, via E. Fermi 45, 00044 Frascati, Italy

4. Department of Engineering, University of Liverpool, Brownlow Hill, Liverpool L69 3GH, United Kingdom

5. School of ICT, KTH Royal Institute of Technology, Isafjordsgatan 22, 164 40 Kista, Sweden

6. CEMES-CNRS and Université de Toulouse, nMat group, BP 94347, 31055 Toulouse Cedex 4, France

Funder

Engineering and Physical Sciences Research Council (EPSRC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4922121

Reference46 articles.

1. (Invited) The Past, Present and Future of High-k/Metal Gates

2. Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties

3. High mobility strained-Ge pMOSFETs with 0.7-nm ultrathin EOT using plasma post oxidation HfO2/Al2O3/GeOx gate stacks and strain modulation

4. Oxidation of Ge(100) and Ge(111) surfaces: an UPS and XPS study

5. Radical oxidation of germanium for interface gate dielectric GeO2 formation in metal-insulator-semiconductor gate stack

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