Author:
Choi Kisik,Ando Takashi,Cartier Eduard A.,Kerber Andreas,Paruchuri Vamsi,Iacoponi John,Narayanan Vijay
Abstract
Like other technology components of the semiconductor industry, the high-k/metal gate has also continued innovation since its introduction to the 45 nm node. In order to fulfill the ever-increasing power/performance requirements for the future devices, new device architectures are being introduced and the high-k/metal gate should evolve in accordance. In this paper, the development history of the high-k/metal gate stack will be reviewed and the qualities required for the high-k/metal gate stack to match with the future devices will be discussed.
Publisher
The Electrochemical Society
Cited by
22 articles.
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