Radical oxidation of germanium for interface gate dielectric GeO2 formation in metal-insulator-semiconductor gate stack-Reference-Cited by-同舟云学术

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Radical oxidation of germanium for interface gate dielectric GeO2 formation in metal-insulator-semiconductor gate stack

Published:2009-11-15 Issue:10 Volume:106 Page:104117
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kobayashi Masaharu,Thareja Gaurav,Ishibashi Masato,Sun Yun,Griffin Peter,McVittie Jim,Pianetta Piero,Saraswat Krishna,Nishi Yoshio

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3259407

Reference36 articles.

Cited by 88 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Germanene Reformation from Oxidized Germanene on Ag(111)/Ge(111) by Vacuum Annealing;Small Methods;2024-09-09

2. Encapsulation of Er-doped GeO2 nanofilms by Al2O3 atomic layers: Surficial sensitivity to trimethylaluminum and improvement on electroluminescence;Ceramics International;2024-04

3. Electroluminescence from Er-doped GeO2 nanofilms fabricated by atomic layer deposition on silicon: Effect of annealing temperature on film properties;Applied Surface Science;2023-12

4. Surface Passivation of Germanium with ALD Al2O3: Impact of Composition and Crystallinity of GeOx Interlayer;Crystals;2023-04-12

5. Investigation on the passivation, band alignment, gate charge, and mobility degradation of the Ge MOSFET with a GeO _x /Al₂O₃ gate stack by ozone oxidation;Journal of Semiconductors;2022-01-01

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