Passivation of oxide traps and interface states in GaAs metal-oxide-semiconductor capacitor by LaTaON passivation layer and fluorine incorporation
Author:
Affiliation:
1. Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong
2. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
Funder
National Natural Science Foundation of China (NSFC)
University of Hong Kong (HKU)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4936329
Reference27 articles.
1. III-V-on-nothing metal-oxide-semiconductor field-effect transistors enabled by top-down nanowire release process: Experiment and simulation
2. Interface engineering and chemistry of Hf-based high-k dielectrics on III–V substrates
3. Effective reduction of interfacial traps in Al2O3/GaAs (001) gate stacks using surface engineering and thermal annealing
4. Aluminum oxide as passivation and gate insulator in GaAs-based field-effect transistors prepared in situ by metal-organic vapor deposition
5. Dielectric properties of Ta2O5–ZrO2 polycrystalline ceramics
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