Kinetics of HfO2 etching and impurity elimination with atomic hydrogen beams-Reference-Cited by-同舟云学术

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Kinetics of HfO2 etching and impurity elimination with atomic hydrogen beams

Published:2021-11 Issue: Volume:566 Page:150607
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Benedicto Marcos,Tejedor Paloma

Funder

Ministerio de Economía y Competitividad

Consejo Superior de Investigaciones Científicas

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference58 articles.

1. Influence of sputtering pressure on the structural, optical and hydrophobic properties of sputtered deposited HfO2 coatings;Dave;Thin Solid Films,2013

2. Reactive evaporation of low-defect density hafnia;Chow;Appl. Opt.,1993

3. First-principles study of structural, vibrational, and lattice dielectric properties of hafnium oxide;Zhao;Phys. Rev. B,2002

4. B. Johnson, J.L. Jones, Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices, in U. Schröder, C. S. Hwang, H. Funakubo (Eds.), Structures, Phase Equilibria, and Properties of HfO2, Elsevier B.V., 2019, pp. 25-45. https://doi.org/10.1016/B978-0-08-102430-0.00002-4.

5. Optical properties of hafnium oxide thin films and their application in energy-efficient windows;Al-Kuhaili;Opt. Mater.,2004

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