Ultra‐low values of the absorption coefficient for band–band transitions in moderately doped Si obtained from luminescence
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363471
Reference30 articles.
1. Ultralow Values of the Absorption Coefficient of Si Obtained from Luminescence
2. Heavily doped silicon studied by luminescence and selective absorption
3. Radiative recombination and photon recycling in photovoltaic solar cells
4. Accurate determination of minority carrier‐ and lattice scattering‐mobility in silicon from photoconductance decay
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2. Contactless, nondestructive determination of dopant profiles of localized boron-diffused regions in silicon wafers at room temperature;Scientific Reports;2019-07-18
3. Sub-Bandgap Luminescence from Doped Polycrystalline and Amorphous Silicon Films and Its Application to Understanding Passivating-Contact Solar Cells;ACS Applied Energy Materials;2018-10-16
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