Accurate determination of minority carrier‐ and lattice scattering‐mobility in silicon from photoconductance decay
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.352225
Reference46 articles.
1. Notizen: Zur Driftbeweglichkeit der Ladungsträger in hochreinem Silicium
2. Drift and Conductivity Mobility in Silicon
3. Lifetime and diffusivity determination from frequency-domain transient analysis
4. Drift Mobilities in Semiconductors. II. Silicon
5. Measurement of minority carrier lifetime and diffusion length in silicon epitaxial layers by means of the photocurrent technique
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