Contactless, nondestructive determination of dopant profiles of localized boron-diffused regions in silicon wafers at room temperature-Reference-Cited by-同舟云学术

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Contactless, nondestructive determination of dopant profiles of localized boron-diffused regions in silicon wafers at room temperature

Published:2019-07-18 Issue:1 Volume:9 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Nguyen Hieu T.^ORCID,Li Zhuofeng,Han Young-Joon^ORCID,Basnet Rabin,Tebyetekerwa Mike^ORCID,Truong Thien N.^ORCID,Wu Huiting,Yan Di,Macdonald Daniel

Funder

Australian Renewable Energy Agency

Australian Centre for Advanced Photovoltaics

Australian Government Research Training Program (RTP) Scholarship

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/s41598-019-46986-z.pdf

Reference38 articles.

1. Franklin, E. et al. Design, fabrication and characterisation of a 24.4% efficient interdigitated back contact solar cell. Prog. Photovolt: Res. Appl. 24, 411–427 (2014).

2. Masuko, K. et al. Achievement of more than 25% conversion efficiency with crystalline silicon heterojunction solar cell. IEEE J. Photovolt. 4, 1433–1435 (2014).

3. Yoshikawa, K. et al. Exceeding conversion efficiency of 26% by heterojunction interdigitated back contact solar cell with thin film Si technology. Sol. Energy Mater. Sol. Cells 173, 37–42 (2017).

4. Wang, A., Zhao, J. & Green, M. A. 24% efficient silicon solar cells. Appl. Phys. Lett. 57, 602–604 (1998).

5. Zhao, J., Wang, A. & Green, M. A. 24·5% Efficiency silicon PERT cells on MCZ substrates and 24·7% efficiency PERL cells on FZ substrates. Prog. Photovolt: Res. Appl. 7, 471–474 (1999).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Probing the nature of charge carriers in one-dimensional conjugated polymers: a review of the theoretical models, experimental trends, and thermoelectric applications;Journal of Materials Chemistry C;2023

2. Determination of doping concentration of heavily doped silicon wafers using photon reabsorption in photocarrier radiometry;AIP Advances;2020-03-01

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