Sub-Bandgap Luminescence from Doped Polycrystalline and Amorphous Silicon Films and Its Application to Understanding Passivating-Contact Solar Cells-Reference-Cited by-同舟云学术

Sub-Bandgap Luminescence from Doped Polycrystalline and Amorphous Silicon Films and Its Application to Understanding Passivating-Contact Solar Cells

Published:2018-10-16 Issue:11 Volume:1 Page:6619-6625
ISSN:2574-0962
Container-title:ACS Applied Energy Materials
language:en
Short-container-title:ACS Appl. Energy Mater.

Author:

Nguyen Hieu T.¹^ORCID,Liu Anyao¹^ORCID,Yan Di¹,Guthrey Harvey²,Truong Thien N.¹^ORCID,Tebyetekerwa Mike¹^ORCID,Li Ziyuan³^ORCID,Li Zhuofeng¹,Al-Jassim Mowafak M.²,Cuevas Andres¹,Macdonald Daniel¹

Affiliation:

1. Research School of Engineering, The Australian National University, Canberra, ACT 2601, Australia

2. National Renewable Energy Laboratory, Golden, Colorado 80401, United States

3. Department of Electronic Materials Engineering, The Australian National University, Canberra, ACT 2601, Australia

Funder

National Renewable Energy Laboratory

Australian Renewable Energy Agency

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Materials Chemistry,Electrochemistry,Energy Engineering and Power Technology,Chemical Engineering (miscellaneous)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaem.8b01561

Reference54 articles.

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2. Ultra‐low values of the absorption coefficient for band–band transitions in moderately doped Si obtained from luminescence

3. Temperature dependence of the radiative recombination coefficient of intrinsic crystalline silicon

4. Temperature dependence of the band-band absorption coefficient in crystalline silicon from photoluminescence

5. Injection dependence of spontaneous radiative recombination in crystalline silicon: Experimental verification and theoretical analysis

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