Photoluminescence of microcrystalline silicon at low temperatures-Reference-Cited by-同舟云学术

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Photoluminescence of microcrystalline silicon at low temperatures

Published:2016-03-18 Issue:7 Volume:213 Page:1710-1716
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Burdorf Sven¹,Brüggemann Rudolf¹²

Affiliation:

1. Institut für Physik; Carl von Ossietzky Universität Oldenburg; 26111 Oldenburg Germany

2. GeePs (Group of Electrical Engineering ’ Paris), UMR CNRS 8507, CentraleSupélec; Univ. Paris-Sud, Université Paris-Saclay, Sorbonne Universités, UPMC Univ. Paris 06, 3 & 11 rue Joliot-Curie, Plateau de Moulon; 91192 Gif-sur-Yvette CEDEX France

Funder

BMBF

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201532977/fullpdf

Reference16 articles.

1. The chemical potential of radiation

2. Verification of a generalized Planck law for luminescence radiation from silicon solar cells

3. Characterization of the interface properties in a-Si : H/c-Si heterostructures by photoluminescence

4. Ultralow Values of the Absorption Coefficient of Si Obtained from Luminescence

5. Ultra‐low values of the absorption coefficient for band–band transitions in moderately doped Si obtained from luminescence

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