The two gap transitions in Ge1−xSnx: Effect of non-substitutional complex defects-Reference-Cited by-同舟云学术

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The two gap transitions in Ge1−xSnx: Effect of non-substitutional complex defects

Published:2016-09-13 Issue:10 Volume:120 Page:105705
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Querales-Flores J. D.¹²,Ventura C. I.¹³,Fuhr J. D.¹²,Barrio R. A.⁴^ORCID

Affiliation:

1. Centro Atómico Bariloche-CNEA and CONICET, Av. Bustillo Km. 9.5, 8400 Bariloche, Argentina

2. Instituto Balseiro, Univ. Nac. de Cuyo and CNEA, 8400 Bariloche, Argentina

3. Univ. Nac. de Río Negro, 8400 Bariloche, Argentina

4. Instituto de Física, U.N.A.M., Ap. Postal 20-364, 01000 México D.F., Mexico

Funder

Consejo Nacional de Ciencia y Tecnología (CONACYT)

Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET)

Agencia Nacional de Promoción Científica y Tecnológica (ANPCyT)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference67 articles.

1. Ge–Sn semiconductors for band-gap and lattice engineering

2. R. Hull and J. C. Bean , Germanium Silicon: Physics and Materials, Semiconductors and Semimetals ( Academic, San Diego, 1999).

3. Direct-gap group IV semiconductors based on tin

4. Optical critical points of thin-filmGe1−ySnyalloys: A comparativeGe1−ySny∕Ge1−xSixstudy

5. Electron mobility enhancement using ultrathin pure Ge on Si substrate

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Group IV Nanowires for Carbon-Free Energy Conversion;Semiconductors and Semimetals;2018

2. Semiconductor, topological semimetal, indirect semimetal, and topological Dirac semimetal phases of Ge1−xSnx alloys;Physical Review B;2017-05-05

3. Growth and Optical Properties of Direct Band Gap Ge/Ge0.87Sn0.13 Core/Shell Nanowire Arrays;Nano Letters;2017-02-09

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