Growth and Optical Properties of Direct Band Gap Ge/Ge0.87Sn0.13 Core/Shell Nanowire Arrays-Reference-Cited by-同舟云学术

Growth and Optical Properties of Direct Band Gap Ge/Ge0.87Sn0.13 Core/Shell Nanowire Arrays

Published:2017-02-09 Issue:3 Volume:17 Page:1538-1544
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Assali S.¹^ORCID,Dijkstra A.¹,Li A.¹²³,Koelling S.¹^ORCID,Verheijen M. A.¹⁴,Gagliano L.¹^ORCID,von den Driesch N.⁵^ORCID,Buca D.⁵,Koenraad P. M.¹,Haverkort J. E. M.¹,Bakkers E. P. A. M.¹²^ORCID

Affiliation:

1. Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands

2. Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft, The Netherlands

3. Beijing Key Lab of Microstructure and Property of Advanced Materials, Beijing University of Technology, Pingleyuan 100, Beijing 100024, P. R. China

4. Philips Innovation Laboratories Eindhoven, High Tech Campus 11, 5656AE Eindhoven, The Netherlands

5. Peter Gruenberg Institute 9 (PGI 9) and JARA-Fundamentals of Future Information Technologies, Forschungszentrum Juelich, 52428 Juelich, Germany

Funder

Stichting voor de Technische Wetenschappen

Nederlandse Organisatie voor Wetenschappelijk Onderzoek

Philips Research

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.6b04627

Reference44 articles.

1. Group IV Photonics: Driving Integrated Optoelectronics

2. Integrating silicon photonics

3. Analysis of enhanced light emission from highly strained germanium microbridges

4. Cracking the Si Shell Growth in Hexagonal GaP-Si Core–Shell Nanowires

5. The direct and indirect bandgaps of unstrained SixGe1−x−ySnyand their photonic device applications

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