Direct-gap group IV semiconductors based on tin
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
General Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/ip-i-1.1982.0043?crawler=true&mimetype=application/pdf
Reference17 articles.
1. Busch, G., and Kern, R.: ‘Semiconducting properties of gray tin’, Seitz, F., Turnbull, D., Solid-state physics., (Academic Press 1960),11, p. 1–40
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